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商品描述
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges.
Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text:
- Describes different techniques used to grow silicon single crystals
- Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication
- Reviews different methods to evaluate silicon wafers to determine suitability for device applications
- Analyzes silicon wafers in terms of resistivity and impurity concentration mapping
- Examines the effect of intentional and unintentional impurities
- Explores the defects found in regular silicon-crystal lattice
- Discusses silicon wafer preparation for VLSI and ULSI processing
Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
商品描述(中文翻譯)
矽作為單晶半導體,已在電子領域引發了一場革命,並觸及幾乎所有科學和技術領域。儘管在自然界中以二氧化矽及其他多種形式豐富存在,但由於其反應性,矽從化合物中分離出來是相當困難的。作為固體,矽在化學上是惰性且穩定的,但將其生長為單晶卻帶來了許多技術挑戰。
《VLSI 和 ULSI 矽的晶體生長與評估》是首批系統性探討矽單晶生長及矽的完整評估的書籍之一,涵蓋了從沙子到用於器件製造的有用晶圓的過程。這本實用的文本是為在半導體製造行業工作的工程師和研究人員撰寫的:
- 描述了用於生長矽單晶的不同技術
- 解釋了如何將生長的單晶錠轉變為完整的矽晶圓以進行集成電路製造
- 回顧了評估矽晶圓的不同方法,以確定其在器件應用中的適用性
- 從電阻率和雜質濃度映射的角度分析矽晶圓
- 檢視故意和非故意雜質的影響
- 探討常規矽晶格中發現的缺陷
- 討論VLSI和ULSI處理的矽晶圓準備
《VLSI 和 ULSI 矽的晶體生長與評估》是選擇基本矽含化合物、將矽分離為冶金級純矽、隨後的純化、單晶生長以及對生長晶體內部偏差的缺陷和評估的不同方法的重要參考資料。