MOS Interface Physics, Process and Characterization
Wang, Shengkai, Wang, Xiaolei
- 出版商: CRC
- 出版日期: 2024-01-29
- 售價: $2,350
- 貴賓價: 9.5 折 $2,233
- 語言: 英文
- 頁數: 162
- 裝訂: Quality Paper - also called trade paper
- ISBN: 103210628X
- ISBN-13: 9781032106281
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相關分類:
物理學 Physics
下單後立即進貨 (約2~4週)
相關主題
商品描述
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.
商品描述(中文翻譯)
基於金屬氧化物半導體（MOS）結構的電子設備是大規模集成電路的最重要組件，也是實現高性能設備的關鍵。本書包含以MOS為重點的實驗示例，將成為微電子領域的學術界和研究生的參考資料。
作者簡介
Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.
Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.
作者簡介(中文翻譯)
盛凱王是中國科學院微電子研究所的教授。他於2011年從東京大學獲得博士學位，並一直從事鍺、III-V、碳化矽在金屬氧化物半導體技術方面的研究。他已發表了100多篇論文並獲得了40多項專利。
小雷王是中國科學院微電子研究所的教授。他於2013年從中國科學院微電子研究所獲得博士學位，並一直從事基於矽/鍺的金屬氧化物半導體技術的研究。他已發表了100多篇論文。
