MOS Interface Physics, Process and Characterization

Wang, Shengkai, Wang, Xiaolei

MOS Interface Physics, Process and Characterization
  • 出版商: CRC
  • 出版日期: 2024-01-29
  • 售價: $2,370
  • 貴賓價: 9.5 折 $2,252
  • 語言: 英文
  • 頁數: 162
  • 裝訂: Quality Paper - also called trade paper
  • ISBN: 103210628X
  • ISBN-13: 9781032106281
  • 相關分類: 物理學 Physics

    • 海外代購書籍(需單獨結帳)

相關主題

商品描述

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.

商品描述(中文翻譯)

基於金屬氧化物半導體（MOS）結構的電子設備是大規模集成電路的最重要組件，也是實現高性能設備的關鍵。本書包含以MOS為重點的實驗示例，將成為微電子領域的學術界和研究生的參考資料。

作者簡介

Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.

Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.

作者簡介(中文翻譯)

盛凱王是中國科學院微電子研究所的教授。他於2011年從東京大學獲得博士學位，並一直從事鍺、III-V、碳化矽在金屬氧化物半導體技術方面的研究。他已發表了100多篇論文並獲得了40多項專利。

小雷王是中國科學院微電子研究所的教授。他於2013年從中國科學院微電子研究所獲得博士學位，並一直從事基於矽/鍺的金屬氧化物半導體技術的研究。他已發表了100多篇論文。

類似商品