Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures
暫譯: 半導體中的擴展缺陷:電子特性、器件效應與結構

D. B. Holt, B. G. Yacobi

  • 出版商: Cambridge
  • 出版日期: 2007-04-12
  • 售價: $2,400
  • 貴賓價: 9.8$2,352
  • 語言: 英文
  • 頁數: 644
  • 裝訂: Hardcover
  • ISBN: 0521819342
  • ISBN-13: 9780521819343
  • 相關分類: 半導體
  • 下單後立即進貨 (約5~7天)

買這商品的人也買了...

相關主題

商品描述

Description

Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Table of Contents

1. Semiconducting materials;

2. An introduction to extended defects;

3. Characterization of extended defects in semiconductors;

4. Core structures and mechanical effects of extended defects specific to semiconductors;

5. The electrical, optical and device effects of dislocations and grain boundaries;

6. Point defect materials problems.


商品描述(中文翻譯)

**描述**
本書涵蓋在電子設備開發中特別重要的主題,調查半導體中結構性擴展缺陷的性質、影響、角色及其表徵。概述了擴展缺陷的基本性質,並討論了它們對半導體電子性質的影響、在半導體設備中的角色以及其表徵技術。本書適合材料科學與工程的高年級本科生及研究生,以及學習半導體物理的學生。

**目錄**
1. 半導體材料;
2. 擴展缺陷簡介;
3. 半導體中擴展缺陷的表徵;
4. 特定於半導體的擴展缺陷的核心結構和機械效應;
5. 位錯和晶界的電學、光學及設備效應;
6. 點缺陷材料問題。