Phonons in Nanostructures
暫譯: 奈米結構中的聲子

Michael A. Stroscio

  • 出版商: Cambridge
  • 出版日期: 2005-08-22
  • 售價: $1,200
  • 貴賓價: 9.8$1,176
  • 語言: 英文
  • 頁數: 292
  • 裝訂: Paperback
  • ISBN: 0521018056
  • ISBN-13: 9780521018050
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商品描述

Description:

This book focuses on the theory of phonon interactions in nanoscale structures with particular emphasis on modern electronic and optoelectronic devices. A key goal is to describe tractable models of confined phonons and how these are applied to calculations of basic properties and phenomena of semiconductor heterostructures. The level of presentation is appropriate for undergraduate and graduate students in physics and engineering with some background in quantum mechanics and solid state physics or devices.

 

Table of Contents:

Preface; The first part: 1. Phonons in nanostructures; 2. Phonons in bulk cubic crystals; 3. Phonons in bulk würtzite crystals; 4. Raman properties of bulk phonons; 5. Occupation number representation and general formulation of carrier-phonon scattering rates; 6. Anharmonic coupling of phonons; 7. Continuum models for phonons in bulk and dimensionally-confined semiconductors; 8. Carrier-LO-phonon scattering; 9. Carrier-acoustic-phonon scattering; 10. Recent developments on electron-phonon interactions in structures in electronic and optoelectronic devices; 11. Concluding considerations; Appendices.

商品描述(中文翻譯)

**描述:**
本書專注於納米結構中聲子相互作用的理論,特別強調現代電子和光電子設備。主要目標是描述可處理的受限聲子模型,以及這些模型如何應用於半導體異質結構的基本性質和現象的計算。內容的呈現適合具有量子力學和固態物理或設備背景的物理和工程本科生及研究生。

**目錄:**
前言;第一部分:1. 納米結構中的聲子;2. 體積立方晶體中的聲子;3. 體積六方晶體中的聲子;4. 體積聲子的拉曼特性;5. 佔據數表示法和載流子-聲子散射率的一般公式;6. 聲子的非諧耦合;7. 體積和維度受限半導體中聲子的連續模型;8. 載流子-光學聲子散射;9. 載流子-聲學聲子散射;10. 電子-聲子相互作用在電子和光電子設備結構中的最新發展;11. 結論考量;附錄。