Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications
暫譯: 超低功耗應用的完全耗盡SOI CMOS電路與技術

Takayasu Sakurai, Akira Matsuzawa, Takakuni Douseki

Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications
  • 出版商: Springer
  • 出版日期: 2006-04-11
  • 售價: $1,500
  • 貴賓價: 9.8 折 $1,470
  • 語言: 英文
  • 頁數: 411
  • 裝訂: Hardcover
  • ISBN: 0387292179
  • ISBN-13: 9780387292175
  • 相關分類: CMOS

    • 下單後立即進貨 (約5~7天)

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Description

The most important issue confronting CMOS technology is the power explosion of chips arising from the scaling law. Fully-depleted (FD) SOI technology provides a promising low-power solution to chip implementation. Ultralow-power VLSIs, which have a power consumption of less than 10 mW, will be key components of terminals in the coming ubiquitous-IT society. Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding. The authors present three examples of ultralow-power systems based on FD-SOI technology, providing every reader with practical knowledge on the technology and the circuits.

 

Table of contents

List of Contributors. Preface.

1. Introduction. 1.1 Why SOI? 1.2 What is SOI? —Structure —. 1.3 Advantages of SOI. 1.4 History of the Development of SOI Technology. 1.5 Partially-Depleted (PD) and Fully-Depleted (FD) SOI . MOSFETs, and Future MOSFETs. 1.6 Summary. References.

2. FD-SOI Device and Process Technologies.
2.1 Introduction. 2.2 FD-SOI Devices. 2.3 Theoretical Basis of FD-SOI Device Operation: DC Operation. 2.4 FD-SOI CMOS Process Technology. 2.5 Summary. References

3. Ultralow-Power Circuit Design with FD-SOI Devices.
3.1 Introduction. 3.2 Ultralow-Power Short-Range Wireless Systems. 3.3 Key Design Factor for Ultralow-Power LSIs. 3.4 Ultralow-Voltage Digital-Circuit Design. 3.5 Robustness of Ultralow-Voltage Operation. 3.6 Prospects and Issues in Low-Voltage Analog Circuits. 3.7 Technology Scaling, Analog Performance, and Performance Trend for Electrical Systems. 3.8 Low-Voltage Analog Circuit. 3.9 Fully-Depleted SOI Devices for Ultralow-Power Analog Circuits. 3.10 Future Direction of RF and Mixed Signal Systems. 3.11 Summary. References.

4. 0.5-V MTCMOS/SOI Digital Circuits.
4.1 Introduction. 4.2 MTCMOS/SOI Circuits. 4.3 Adder. 4.4 Multiplier. 4.5 Memory. 4.6 Frequency Divider. 4.7 CPU. 4.8 Summary. References.

5. 0.5-1V MTCMOS/SOI Analog/RF Circuits.
5.1 Introduction. 5.2 RF Building Blocks. 5.3 AD and DA Converters. 5.4 DC-DC Converter. 5.5 I/O and ESD-Protection Circuitry for Ultralow-Power LSIs. 5.6 Summary. References

6. SPICE Model for SOI MOSFETs.
6.1 Introduction. 6.2 SPICE Model for SOI MOSFETs. 6.3 Parameter Extraction. 6.4 Example of SOI MOSFET Simulation. 6.5 Summary. References.

7. Applications.
7.1 Introduction. 7.2 1-V Bluetooth RF Transceiver and Receiver. 7.3 Solar-Powered, Radio-Controlled Watch. 7.4 Batteryless Short-Range Wireless System. 7.5 Summary. References.

8. Prospects for FD-SOI Technology.
8.1 Introduction. 8.2 Evolution of Nanoscale FD-SOI Devices. 8.3 Device and Substrate Technologies for Ultrathin-Body SOI MOSFETs. 8.4 Power-Aware Electronics and Role of FD-SOI Technology. 8.5 Summary. References.

商品描述(中文翻譯)

**描述**

CMOS技術面臨的最重要問題是由於縮放法則所引起的晶片功耗爆炸。完全耗盡（FD）SOI技術提供了一個有前景的低功耗晶片實現解決方案。超低功耗VLSI，其功耗低於10 mW，將成為未來無所不在的IT社會中終端的關鍵組件。《完全耗盡SOI CMOS電路與超低功耗應用技術》針對傳統電路在超低功耗運行中降低供應電壓的問題，並解釋了在0.5 V供應電壓下，針對FD-SOI設備的功率高效MTCMOS電路設計。主題包括SOI基板製造的最低必要知識；FD-SOI設備及其最新的設備和工藝技術發展；以及超低電壓電路，如數位電路、類比/RF電路和DC-DC轉換器。每種與設備和電路相關的超低功耗技術都使用圖示進行詳細解釋，以幫助理解。作者提供了三個基於FD-SOI技術的超低功耗系統示例，為每位讀者提供有關該技術和電路的實用知識。

**目錄**

貢獻者名單。前言。

1. 介紹。1.1 為什麼選擇SOI？1.2 SOI是什麼？—結構—。1.3 SOI的優勢。1.4 SOI技術發展歷史。1.5 部分耗盡（PD）和完全耗盡（FD）SOI MOSFET及未來MOSFET。1.6 總結。參考文獻。

2. FD-SOI設備和工藝技術。
2.1 介紹。2.2 FD-SOI設備。2.3 FD-SOI設備運作的理論基礎：直流運作。2.4 FD-SOI CMOS工藝技術。2.5 總結。參考文獻。

3. 使用FD-SOI設備的超低功耗電路設計。
3.1 介紹。3.2 超低功耗短距離無線系統。3.3 超低功耗LSI的關鍵設計因素。3.4 超低電壓數位電路設計。3.5 超低電壓運作的穩健性。3.6 低電壓類比電路的前景與問題。3.7 技術縮放、類比性能及電氣系統的性能趨勢。3.8 低電壓類比電路。3.9 用於超低功耗類比電路的完全耗盡SOI設備。3.10 RF和混合信號系統的未來方向。3.11 總結。參考文獻。

4. 0.5-V MTCMOS/SOI數位電路。
4.1 介紹。4.2 MTCMOS/SOI電路。4.3 加法器。4.4 乘法器。4.5 記憶體。4.6 頻率分頻器。4.7 CPU。4.8 總結。參考文獻。

5. 0.5-1V MTCMOS/SOI類比/RF電路。
5.1 介紹。5.2 RF基本元件。5.3 AD和DA轉換器。5.4 DC-DC轉換器。5.5 用於超低功耗LSI的I/O和ESD保護電路。5.6 總結。參考文獻。

6. SOI MOSFET的SPICE模型。
6.1 介紹。6.2 SOI MOSFET的SPICE模型。6.3 參數提取。6.4 SOI MOSFET模擬示例。6.5 總結。參考文獻。

7. 應用。
7.1 介紹。7.2 1-V藍牙RF收發器和接收器。7.3 太陽能供電的無線控制手錶。7.4 無電池短距離無線系統。7.5 總結。參考文獻。

8. FD-SOI技術的前景。
8.1 介紹。8.2 納米級FD-SOI設備的演變。8.3 超薄體SOI MOSFET的設備和基板技術。8.4 具功率感知的電子產品及FD-SOI技術的角色。8.5 總結。參考文獻。

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