Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications (全耗盡SOI CMOS電路與技術：超低功耗應用)

Takayasu Sakurai, Akira Matsuzawa, Takakuni Douseki

Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications
  • 出版商: Springer
  • 出版日期: 2006-04-11
  • 售價: $1,500
  • 貴賓價: 9.8 折 $1,470
  • 語言: 英文
  • 頁數: 411
  • 裝訂: Hardcover
  • ISBN: 0387292179
  • ISBN-13: 9780387292175
  • 相關分類: CMOS

    • 下單後立即進貨 (約5~7天)

買這商品的人也買了...

相關主題

商品描述

Description

The most important issue confronting CMOS technology is the power explosion of chips arising from the scaling law. Fully-depleted (FD) SOI technology provides a promising low-power solution to chip implementation. Ultralow-power VLSIs, which have a power consumption of less than 10 mW, will be key components of terminals in the coming ubiquitous-IT society. Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding. The authors present three examples of ultralow-power systems based on FD-SOI technology, providing every reader with practical knowledge on the technology and the circuits.

 

Table of contents

List of Contributors. Preface.

1. Introduction. 1.1 Why SOI? 1.2 What is SOI? —Structure —. 1.3 Advantages of SOI. 1.4 History of the Development of SOI Technology. 1.5 Partially-Depleted (PD) and Fully-Depleted (FD) SOI . MOSFETs, and Future MOSFETs. 1.6 Summary. References.

2. FD-SOI Device and Process Technologies.
2.1 Introduction. 2.2 FD-SOI Devices. 2.3 Theoretical Basis of FD-SOI Device Operation: DC Operation. 2.4 FD-SOI CMOS Process Technology. 2.5 Summary. References

3. Ultralow-Power Circuit Design with FD-SOI Devices.
3.1 Introduction. 3.2 Ultralow-Power Short-Range Wireless Systems. 3.3 Key Design Factor for Ultralow-Power LSIs. 3.4 Ultralow-Voltage Digital-Circuit Design. 3.5 Robustness of Ultralow-Voltage Operation. 3.6 Prospects and Issues in Low-Voltage Analog Circuits. 3.7 Technology Scaling, Analog Performance, and Performance Trend for Electrical Systems. 3.8 Low-Voltage Analog Circuit. 3.9 Fully-Depleted SOI Devices for Ultralow-Power Analog Circuits. 3.10 Future Direction of RF and Mixed Signal Systems. 3.11 Summary. References.

4. 0.5-V MTCMOS/SOI Digital Circuits.
4.1 Introduction. 4.2 MTCMOS/SOI Circuits. 4.3 Adder. 4.4 Multiplier. 4.5 Memory. 4.6 Frequency Divider. 4.7 CPU. 4.8 Summary. References.

5. 0.5-1V MTCMOS/SOI Analog/RF Circuits.
5.1 Introduction. 5.2 RF Building Blocks. 5.3 AD and DA Converters. 5.4 DC-DC Converter. 5.5 I/O and ESD-Protection Circuitry for Ultralow-Power LSIs. 5.6 Summary. References

6. SPICE Model for SOI MOSFETs.
6.1 Introduction. 6.2 SPICE Model for SOI MOSFETs. 6.3 Parameter Extraction. 6.4 Example of SOI MOSFET Simulation. 6.5 Summary. References.

7. Applications.
7.1 Introduction. 7.2 1-V Bluetooth RF Transceiver and Receiver. 7.3 Solar-Powered, Radio-Controlled Watch. 7.4 Batteryless Short-Range Wireless System. 7.5 Summary. References.

8. Prospects for FD-SOI Technology.
8.1 Introduction. 8.2 Evolution of Nanoscale FD-SOI Devices. 8.3 Device and Substrate Technologies for Ultrathin-Body SOI MOSFETs. 8.4 Power-Aware Electronics and Role of FD-SOI Technology. 8.5 Summary. References.

商品描述(中文翻譯)

描述

CMOS技術面臨的最重要問題是由於尺寸縮小法則而引起的晶片功耗爆炸。全耗盡（FD）SOI技術為晶片實現提供了一種有前途的低功耗解決方案。超低功耗VLSI，其功耗低於10 mW，將成為未來無所不在的IT社會中終端的關鍵組件。《全耗盡SOI CMOS電路和超低功耗應用技術》解決了將傳統電路的供應電壓降低到超低功耗運行所需的問題，並解釋了在0.5 V供應電壓下對FD-SOI器件進行功耗高效的MTCMOS電路設計。主題包括對SOI基板製造的最低要求知識；FD-SOI器件和器件和工藝技術的最新發展；以及超低電壓電路，如數字電路，模擬/射頻電路和DC-DC轉換器。使用圖形完全解釋了與器件和電路相關的每種超低功耗技術，以幫助理解。作者提供了基於FD-SOI技術的三個超低功耗系統的示例，為每個讀者提供了有關技術和電路的實用知識。

目錄

貢獻者名單。前言。

1. 簡介。1.1 為什麼使用SOI？1.2 什麼是SOI？-結構-。1.3 SOI的優勢。1.4 SOI技術發展的歷史。1.5 部分耗盡（PD）和全耗盡（FD）SOI。MOSFET和未來MOSFET。1.6 總結。參考文獻。

2. FD-SOI器件和工藝技術。2.1 簡介。2.2 FD-SOI器件。2.3 FD-SOI器件操作的理論基礎：直流操作。2.4 FD-SOI CMOS工藝技術。2.5 總結。參考文獻

3. 使用FD-SOI器件的超低功耗電路設計。3.1 簡介。3.2 超低功耗短距離無線系統。3.3 超低功耗LSI的關鍵設計因素。3.4 超低電壓數字電路設計。3.5 超低電壓操作的穩定性。3.6 低電壓模擬電路的前景和問題。3.7 技術縮放，模擬性能和電氣系統性能趨勢。3.8 低電壓模擬電路。3.9 全耗盡SOI器件用於超低功耗模擬電路。3.10 RF和混合信號系統的未來方向。3.11 總結。參考文獻。

4. 0.5 V MTCMOS/SOI數字電路。4.1 簡介。4.2 MTCMOS/SOI電路。4.3 加法器。4.4 乘法器。4.5 存儲器。4.6 頻率分頻器。4.7 CPU。4.8 總結。參考文獻。

5. 0.5-1V MTCMOS/SOI模擬/射頻電路。5.1 簡介。5.2 RF構建塊。5.3 AD和DA轉換器。5.4 DC-DC轉換器。5.5 超低功耗LSI的I/O和ESD保護電路。5.6 總結。參考文獻

6. SOI MOSFET的SPICE模型。6.1 簡介。6.2 SOI MOSFET的SPICE模型。6.3 參數提取。6.4 SOI MOSFET模擬的示例。6.5 總結。參考文獻。

7. 應用。7.1 簡介。7.2 1V藍牙射頻收發器。7.3 太陽能供電的無線電控手錶。7.4 無電池短距離無線系統。7.5 總結。參考文獻。

8. FD-SOI技術的前景。8.1 簡介。8.2 FD-SOI納米級器件的演變。8.3 FD-SOI器件和基板技術。

類似商品