2D Materials for Nanoelectronics
暫譯: 納米電子學的二維材料
Houssa, Michel, Dimoulas, Athanasios, Molle, Alessandro
- 出版商: CRC
- 出版日期: 2021-03-31
- 售價: $2,450
- 貴賓價: 9.5 折 $2,328
- 語言: 英文
- 頁數: 467
- 裝訂: Quality Paper - also called trade paper
- ISBN: 0367783037
- ISBN-13: 9780367783037
海外代購書籍(需單獨結帳)
商品描述
Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.
Comprised of chapters authored by internationally recognised researchers, this book:
- Discusses the use of graphene for high-frequency analog circuits
- Explores logic and photonic applications of molybdenum disulfide (MoS2)
- Addresses novel 2D materials including silicene, germanene, stanene, and phosphorene
- Considers the use of 2D materials for both field-effect transistors (FETs) and logic circuits
- Provides background on the simulation of structural, electronic, and transport properties from first principles
2D Materials for Nanoelectronics presents extensive, state-of-the-art coverage of the fundamental and applied aspects of this exciting field.
商品描述(中文翻譯)
主要的半導體產業發展即將來臨,透過使用二維(2D)材料,如石墨烯和過渡金屬二硫化物,來製作集成電路(IC)。2D Materials for Nanoelectronics 是首部全面探討這些材料及其在納米電子設備中應用的著作。
本書由國際知名研究者撰寫的章節組成,內容包括:
- 討論石墨烯在高頻類比電路中的應用
- 探索二硫化鉬(MoS2)的邏輯和光子應用
- 涉及新穎的2D材料,包括矽烯、鍺烯、錫烯和磷烯
- 考慮2D材料在場效應晶體管(FETs)和邏輯電路中的使用
- 提供從第一原理模擬結構、電子和傳輸特性的背景知識
2D Materials for Nanoelectronics 提供了這一激動人心領域的基本和應用方面的廣泛、最先進的覆蓋。
作者簡介
Michel Houssa earned his master's and PhD in physics at the University of Liège, Belgium. He is presently a professor in the Department of Physics and Astronomy at the University of Leuven, Belgium. His current research focuses on the first principles modeling of various materials, including semiconductor/oxide interfaces and two-dimensional materials (silicene, germanene, and transition metal dichalcogenides), and their heterostructures. He has authored or co-authored nearly 350 publications, given about 50 invited talks and seminars, and been co-organiser of several international symposia and conferences. He is an Electrochemical Society fellow and an Institute of Electrical and Electronics Engineers senior member.
Athanasios Dimoulas earned his PhD in applied physics at the University of Crete, Greece. He is currently the research director and head of the Epitaxy and Surface Science Laboratory at the National Center for Scientific Research "Demokritos," Athens, Greece. He has coordinated several European-funded projects in advanced CMOS and received the European Research Council-funded SMARTGATE - "Smart Gates for the 'Green' Transistor" Advanced Investigator Grant 2011 - "IDEAS." Widely published, Dr. Dimoulas has about 40 invited talks and has been active with several symposia, conferences, and committees as an organizer and chair. He has held fellowships at the University of Groningen, Holland; California Institute of Technology, Pasadena, USA; and University of Maryland, College Park, USA; and been a visiting research scientist at IBM Zurich Research Laboratory, Switzerland.
Alessandro Molle earned his PhD in materials science at the University of Genoa, Italy. He is presently a research scientist and group leader of the research line on low-dimensional materials and devices in the MDM Laboratory at the Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Agrate Brianza, Italy. He is currently involved in the integration of silicene and other 2D elementary materials into transistors, and in the synthesis and structural characterisation of 2D materials beyond graphene. Widely published, he has been active with symposia, received many invitations to present at international conferences, and guest edited special issues of proceeding papers. He has been co-chairing a master's course on surfaces and interfaces at the University of Milano-Bicocca, Italy.
作者簡介(中文翻譯)
米歇爾·霍薩 (Michel Houssa) 在比利時列日大學獲得物理學碩士和博士學位。他目前是比利時魯汀大學物理與天文學系的教授。他目前的研究專注於各種材料的第一性原理建模,包括半導體/氧化物界面和二維材料(矽烯、鍺烯和過渡金屬二硫化物)及其異質結構。他已發表或共同發表近350篇論文,進行約50場受邀演講和研討會,並共同組織了幾個國際研討會和會議。他是電化學學會的會士,也是電氣和電子工程師學會的高級會員。
阿塔納西奧斯·迪穆拉斯 (Athanasios Dimoulas) 在希臘克里特大學獲得應用物理學博士學位。他目前是希臘雅典“德莫克里托斯”國家科學研究中心的外延和表面科學實驗室的研究主任和負責人。他協調了幾個歐洲資助的先進CMOS項目,並獲得了歐洲研究委員會資助的SMARTGATE - “綠色”晶體管的智能閘道高級研究者獎2011 - “IDEAS”。迪穆拉斯博士發表了大量論文,進行了約40場受邀演講,並在多個研討會、會議和委員會中擔任組織者和主席。他曾在荷蘭格羅寧根大學、美國加州理工學院(帕薩迪納)和美國馬里蘭大學(喬治城)擔任研究員,並在瑞士IBM蘇黎世研究實驗室擔任訪問研究科學家。
亞歷山德羅·莫萊 (Alessandro Molle) 在意大利熱那亞大學獲得材料科學博士學位。他目前是意大利國家科學研究委員會微電子學與微系統研究所(CNR-IMM)MDM實驗室低維材料和器件研究線的研究科學家和小組負責人。他目前參與將矽烯和其他二維基本材料整合到晶體管中,以及合成和結構表徵超越石墨烯的二維材料。他發表了大量論文,積極參與研討會,並多次受邀在國際會議上發表演講,還擔任過會議論文特刊的客座編輯。他曾在意大利米蘭比科卡大學共同主持有關表面和界面的碩士課程。