商品描述
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.
商品描述(中文翻譯)
為了克服MOSFET裝置持續面臨的縮放挑戰，FinFET已成為下一代集成電路(IC)製造技術的真正替代方案。本書的目標是提供FinFET裝置和技術的基本理論與操作原理，概述FinFET裝置架構和製造過程，以及詳細的FinFET靜電和動態裝置特性公式，以便於IC設計和製造。因此，本書適合正在轉向FinFET技術的實務工程師，並為下一代裝置工程師和學術專家在奈米節點的主流裝置技術做好準備。
作者簡介
Samar K. Saha received a PhD in Physics from Gauhati University, India, and
MS in Engineering Management from Stanford University, CA. Currently, he is an
Adjunct Professor in the Electrical Engineering Department at Santa Clara University,
CA, and Chief Research Scientist at Prospicient Devices, CA. Since 1984, he has
worked in various technical and management positions for National Semiconductor,
LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology,
Synopsys, DSM Solutions, Silterra USA, and SuVolta. He has also worked as a
faculty member in the Electrical Engineering Departments at Southern Illinois
University at Carbondale, IL; Auburn University, AL; the University of Nevada at
Las Vegas, NV; and the University of Colorado at Colorado Springs, CO. He has
authored more than 100 research papers. He has also authored one book, Compact
Models for Integrated Circuit Design: Conventional Transistors and Beyond (CRC
Press, 2015); one book chapter on Technology Computer-Aided Design (TCAD),
"Introduction to Technology Computer-Aided Design," in Technology Computer
Aided Design: Simulation for VLSI MOSFET (C.K. Sarkar, ed., CRC Press, 2013);
and holds 12 US patents. His research interests include nanoscale device and process
architecture, TCAD, compact modeling, devices for renewable energy, and TCAD
and R&D management.
Dr. Saha served as the 2016-2017 President of the Institute of Electrical and
Electronics Engineers (IEEE) Electron Devices Society (EDS) and is currently serving
as the Senior Past President of EDS, J.J. Ebers Award Committee Chair, and
EDS Fellow Evaluation Committee Chair. He is a Fellow of IEEE and a Fellow
of the Institution of Engineering and Technology (IET, UK), and a Distinguished
Lecturer of IEEE EDS. Previously, he has served as the Junior Past President of EDS;
EDS Awards Chair; EDS Fellow Evaluation Committee Member; EDS President-
Elect; Vice President of EDS Publications; an elected member of the EDS Board of
Governors; Editor-In-Chief of IEEE QuestEDS; Chair of EDS George Smith and Paul
Rappaport Awards; Editor of Region 5&6 EDS Newsletter; Chair of EDS Compact
Modeling Technical Committee; Chair of EDS North America West Subcommittee
for Regions/Chapters; a member of the IEEE Conference Publications Committee;
a member of the IEEE TAB Periodicals Committee; and the Treasurer, Vice Chair,
and Chair of the Santa Clara Valley-San Francisco EDS chapter.
Dr. Saha served as the head guest editor for the IEEE Transactions on
Electron Devices (T-ED) Special Issues (SIs) on Advanced Compact Models and
45-nm Modeling Challenges and Compact Interconnect Models for Giga Scale
Integration; and as a guest editor for the T-ED SI on Advanced Modeling of Power
Devices and their Applications and the IEEE Journal of Electron Devices
Society (J-EDS) SI on Flexible Electronics from the Selected Extended Papers at
2018 IFETC. He has also served as a member of the editorial board of the World
Journal of Condensed Matter Physics (WJCMP), published by the Scientific
Research Publishing (SCIRP).
作者簡介(中文翻譯)
Samar K. Saha 於印度高哈提大學獲得物理學博士學位，並於加州史丹佛大學獲得工程管理碩士學位。目前，他是加州聖克拉拉大學電機工程系的兼任教授，以及加州 Prospicient Devices 的首席研究科學家。自1984年以來，他在國家半導體公司（National Semiconductor）、LSI Logic、德州儀器（Texas Instruments）、飛利浦半導體（Philips Semiconductors）、矽儲存技術（Silicon Storage Technology）、Synopsys、DSM Solutions、Silterra USA 和 SuVolta 擔任過各種技術和管理職位。他還曾在伊利諾伊州卡本代爾的南伊利諾伊大學、阿拉巴馬州奧本大學、內華達州拉斯維加斯大學和科羅拉多州科羅拉多斯普林斯大學的電機工程系擔任教職。他已發表超過100篇研究論文，並著有一本書《Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond》（CRC Press, 2015）；一篇關於技術計算機輔助設計（Technology Computer-Aided Design, TCAD）的書章《Introduction to Technology Computer-Aided Design》，收錄於《Technology Computer-Aided Design: Simulation for VLSI MOSFET》（C.K. Sarkar 編輯，CRC Press, 2013）；並持有12項美國專利。他的研究興趣包括納米尺度設備和工藝架構、TCAD、緊湊建模、可再生能源設備以及TCAD和研發管理。
Saha 博士曾擔任2016-2017年電氣和電子工程師學會（IEEE）電子設備學會（EDS）會長，目前擔任EDS的資深前會長、J.J. Ebers 獎委員會主席及EDS Fellow 評估委員會主席。他是IEEE的Fellow，也是英國工程技術學會（IET）的Fellow，並且是IEEE EDS的傑出講者。之前，他曾擔任EDS的初級前會長；EDS獎項主席；EDS Fellow 評估委員會成員；EDS會長候選人；EDS出版物副會長；EDS理事會的當選成員；IEEE《QuestEDS》的主編；EDS George Smith 和 Paul Rappaport 獎的主席；第5和第6區域EDS通訊的編輯；EDS緊湊建模技術委員會的主席；EDS北美西部區域/分會的主席；IEEE會議出版委員會成員；IEEE TAB期刊委員會成員；以及聖克拉拉谷-舊金山EDS分會的財務主管、副主席和主席。
Saha 博士擔任IEEE Transactions on Electron Devices (T-ED) 特刊《Advanced Compact Models and 45-nm Modeling Challenges》和《Compact Interconnect Models for Giga Scale Integration》的主編；並擔任T-ED特刊《Advanced Modeling of Power Devices and their Applications》及IEEE Journal of Electron Devices Society (J-EDS) 特刊《Flexible Electronics from the Selected Extended Papers at 2018 IFETC》的客座編輯。他還曾擔任《World Journal of Condensed Matter Physics (WJCMP)》的編輯委員會成員，該期刊由科學研究出版（SCIRP）發行。
