Semiconductor Device Physics and Simulation (Hardcover)
暫譯: 半導體元件物理與模擬(精裝版)
J.S. Yuan, Juin Jei Liou
- 出版商: Kluwer Academic Publ
- 出版日期: 1998-05-31
- 售價: $980
- 貴賓價: 9.8 折 $960
- 語言: 英文
- 頁數: 336
- 裝訂: Hardcover
- ISBN: 0814406327
- ISBN-13: 9780306457241
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相關分類:
半導體、物理學 Physics
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商品描述
This volume provides thorough coverage of modern semiconductor devices -including hetero- and homo-junction devices-using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results. Each device is examined in terms of dc, ac, and transient simulator results; relevant device physics; and implications for design and analysis. Two hundred forty-four useful figures illustrate the physical mechanisms and characteristics of the devices simulated. Comprehensive and carefully organized, Semiconductor Device Physics and Simulation is the ideal bridge from device physics to practical device design
Contents
Introduction. P-N Junction. Bipolar Junction Transistors. Junction Field-Effect Transistors. Metal-Oxide-Semiconductor Field-Effect Transistors. BiCMOS Devices. Metal-Semiconductor Field-Effect Transistors. Heterojunction Bipolar Transistors. Photoconductive Diodes. Index.
商品描述(中文翻譯)
本卷全面涵蓋了現代半導體裝置,包括異質接面和同質接面裝置,使用二維模擬器(MEDICI)進行分析並生成模擬結果。每個裝置都從直流(dc)、交流(ac)和瞬態模擬結果、相關的裝置物理以及對設計和分析的影響進行檢視。兩百四十四幅有用的圖示說明了模擬裝置的物理機制和特性。《半導體裝置物理與模擬》內容全面且組織嚴謹,是從裝置物理到實際裝置設計的理想橋樑。
目錄
引言。P-N接面。雙極接面晶體管。接面場效應晶體管。金屬氧化物半導體場效應晶體管。BiCMOS裝置。金屬半導體場效應晶體管。異質接面雙極晶體管。光導二極體。索引。