Fabrication Engineering at the Micro- and Nanoscale, 4/e (Paperback)
暫譯: 微米與奈米尺度的製造工程,第4版(平裝本)
Stephen A. Campbell
- 出版商: Oxford University
- 出版日期: 2012-11-15
- 售價: $9,570
- 貴賓價: 9.5 折 $9,092
- 語言: 英文
- 頁數: 688
- 裝訂: Paperback
- ISBN: 0199861226
- ISBN-13: 9780199861224
-
相關分類:
半導體、奈米科技 Nano、微電子學 Microelectronics
-
相關翻譯:
微電子製造科學原理與工程技術, 4/e (簡中版)
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商品描述
Designed for advanced undergraduate or first-year graduate courses in semiconductor or microelectronic fabrication, Fabrication Engineering at the Micro- and Nanoscale, Fourth Edition, covers the entire basic unit processes used to fabricate integrated circuits and other devices.
With many worked examples and detailed illustrations, this engaging introduction provides the tools needed to understand the frontiers of fabrication processes.
NEW TO THIS EDITION
Coverage of many new topics including:
- the flash and spike annealing processes
- extreme ultraviolet (EUV) lithography
- GaN epitaxial growth and doping
- double exposure routes to sub-35-nm lithography
- architectures for nanoscale CMOS as practiced at the 45-nm node
- trigate or FINFET CMOS planned for 22 nm and below
- bulk silicon and thin film solar cell manufacturing
- GaN LED fabrication
- microfluidics
Updated sections on nonoptical lithography
Expanded content on state-of-the-art CMOS
A Companion Website with PowerPoint slides of figures from the text (www.oup.com/us/campbell)
An Instructor's Solutions Manual, available to registered adopters of the text (978-0-19-986121-7)
With many worked examples and detailed illustrations, this engaging introduction provides the tools needed to understand the frontiers of fabrication processes.
NEW TO THIS EDITION
Coverage of many new topics including:
- the flash and spike annealing processes
- extreme ultraviolet (EUV) lithography
- GaN epitaxial growth and doping
- double exposure routes to sub-35-nm lithography
- architectures for nanoscale CMOS as practiced at the 45-nm node
- trigate or FINFET CMOS planned for 22 nm and below
- bulk silicon and thin film solar cell manufacturing
- GaN LED fabrication
- microfluidics
Updated sections on nonoptical lithography
Expanded content on state-of-the-art CMOS
A Companion Website with PowerPoint slides of figures from the text (www.oup.com/us/campbell)
An Instructor's Solutions Manual, available to registered adopters of the text (978-0-19-986121-7)
商品描述(中文翻譯)
設計用於高年級本科生或第一年研究生的半導體或微電子製造課程,《微米與納米尺度的製造工程》第四版涵蓋了製造集成電路及其他設備所需的所有基本單元過程。
本書提供了許多實例和詳細插圖,這本引人入勝的入門書籍提供了理解製造過程前沿所需的工具。
**本版新增內容**
**涵蓋許多新主題,包括:**
- 快閃和尖峰退火過程
- 極紫外(EUV)光刻
- GaN 外延生長和摻雜
- 針對小於35納米光刻的雙重曝光路徑
- 在45納米節點上實踐的納米尺度CMOS架構
- 計劃用於22納米及以下的三閘極或FINFET CMOS
- 大塊矽和薄膜太陽能電池製造
- GaN LED 製造
- 微流體技術
**更新的非光學光刻部分**
**擴展的先進CMOS內容**
**伴隨網站**,提供文本中圖形的PowerPoint幻燈片(www.oup.com/us/campbell)
**教師解答手冊**,可供註冊採用本書的使用者使用(978-0-19-986121-7)