Advanced Optical Spectroscopy Techniques for Semiconductors: Raman, Infrared, and Cathodoluminescence Spectroscopy

Dr. Masanobu Yoshikawa completed his doctorate in applied spectroscopy with the Fourier transform infrared (FT-IR) and Raman spectroscopy at the Osaka University in 1986. After his analytical study of the one-dimensionally conducting metal-tetracyanoquinodimethanide (M-TCNQ) with FT-IR and Raman spectroscopy at the Osaka University, he joined Toray Research Center, Inc. in 1986, which is a leading analytical service company in Japan. He has mainly studied wide-gap semiconductors such as diamond, gallium nitride, silicon carbide, using FT-IR, Raman, and cathodoluminescence. He worked for Fraunhofer-Institute in Freiburg in Germany for 6 months in 1998. Furthermore, he has served as the Japanese national project leader for development of the world-first scanning near field Raman spectroscopy (SNOM) from 2003 to 2007, entrusted by New Energy and Industrial Technology Development Organization (NEDO) in Japan and succeeded in stress characterization of Si devices with a spatial resolution of less than 100 nm. As a result, he was awarded the Advance Analytical Instrument Development prize from the Japan Society for Analytical Chemistry (JAIMA) in 2010. He is working for Toray Research Center, Inc. as a senior vice-president and a senior fellow.

Dr. Masanobu Yoshikawa於1986年在大阪大學完成應用光譜學的博士學位，研究領域包括傅立葉轉換紅外線(FT-IR)和拉曼光譜學。在大阪大學，他利用FT-IR和拉曼光譜學對一維導電金屬四氰基喹啉酮衍生物(M-TCNQ)進行了分析研究。隨後，他於1986年加入了日本領先的分析服務公司東營研究中心有限公司(Toray Research Center, Inc.)。他主要研究寬能隙半導體材料，如鑽石、氮化鎵和碳化矽，並利用FT-IR、拉曼光譜和陰極發光技術進行研究。他於1998年在德國弗賴堡的Fraunhofer研究所工作了6個月。此外，他曾擔任日本國家項目負責人，負責開發世界首個掃描近場拉曼光譜(SNOM)，並於2003年至2007年期間由日本新能源與產業技術綜合開發機構(NEDO)委託成功實現了對小於100納米空間分辨率下矽器件的應力表徵。因此，他於2010年獲得了日本分析化學學會(JAIMA)頒發的先進分析儀器開發獎。他目前在東營研究中心有限公司擔任高級副總裁和高級研究員。