Nanoscale Silicon Devices (Hardcover)
暫譯: 奈米級矽元件 (精裝版)

by Shunri Oda (Editor), David K. Ferry (Editor)

  • 出版商: CRC
  • 出版日期: 2015-12-18
  • 售價: $7,780
  • 貴賓價: 9.5$7,391
  • 語言: 英文
  • 頁數: 300
  • 裝訂: Hardcover
  • ISBN: 148222867X
  • ISBN-13: 9781482228670
  • 海外代購書籍(需單獨結帳)

商品描述

Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics

Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption.

This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI).

Additional coverage includes:

  • Physics of nm scaled devices in terms of quantum mechanics
  • Advanced 3D transistors: tri-gate structure and thermal effects
  • Variability in scaled MOSFET
  • Spintronics on Si platform
  • NEMS devices for switching, memory, and sensor applications
  • The concept of ballistic transport
  • The present status of the transistor variability and more

An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.

商品描述(中文翻譯)

更大一定更好嗎? 探索量子力學所描述的非常小型設備的行為

在半導體晶體管方面,越小越好。奈米級矽設備探討了半導體設備微型化的發展及相關的材料、設備、電路和系統設計的進步,並強調了在半導體產業中設備縮放的應用。設備縮放,即持續縮小金屬氧化物半導體場效應晶體管(MOSFET)的尺寸的做法,顯著改善了小型電腦、手機及類似設備的性能。這一做法使得晶片中的延遲時間更短,設備密度更高,而功耗卻沒有增加。

本書涵蓋了最近的進展,並考慮了奈米級矽(Si)設備的未來前景。它介紹了新概念(包括縮放MOSFET的變異性、熱效應、基於自旋電子學的非揮發性計算系統、自旋基量子位、磁電設備、NEMS設備、隧道場效應晶體管、摻雜工程和單電子轉移)、新材料(如高介電常數材料和鍺)以及三維的新設備結構。它涵蓋了這些設備的基本原理,描述了這些設備的物理學和建模,並倡導在未來的大規模集成電路(VLSI)中進一步縮放設備和最小化能耗。

其他內容包括:


  • 以量子力學為基礎的奈米級設備物理
  • 先進的三維晶體管:三閘結構和熱效應
  • 縮放MOSFET的變異性
  • 矽平台上的自旋電子學
  • 用於開關、記憶體和感測器應用的NEMS設備
  • 彈道傳輸的概念
  • 晶體管變異性的現狀及更多

奈米級矽設備》是設備工程師和學術研究人員(包括研究生)在電子設備、固態物理和奈米技術領域中不可或缺的資源。