Physics of Semiconductor Devices, 4/e (Hardcover)
暫譯: 半導體裝置物理學，第4版（精裝本）

Sze, Simon M., Li, Yiming, Ng, Kwok K.

Physics of Semiconductor Devices, 4/e (Hardcover)
  • 出版商: Wiley
  • 出版日期: 2021-03-03
  • 定價: $1,780
  • 售價: 9.8 折 $1,744
  • 語言: 英文
  • 頁數: 944
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 1119429110
  • ISBN-13: 9781119429111
  • 相關分類: 半導體、物理學 Physics

    • 立即出貨 (庫存 < 3)

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商品描述

The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices

The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters.

Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices:

  • Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices
  • Offers completely updated and revised information that reflects advances in device concepts, performance, and application
  • Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy
  • Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual
  • Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors

Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

商品描述(中文翻譯)

最新版本的最詳細且全面的單卷參考書，涵蓋主要半導體器件

《半導體器件物理學》第四版仍然是所有主要雙極性、單極性、特殊微波和光電器件的基本物理學和操作特性的標準參考書。這一全面更新和擴展的版本包含約1,000個原始研究論文和綜述文章的參考文獻，超過650幅高品質的技術插圖，以及二十多個材料參數的表格。

本書分為五個部分，首先提供半導體特性的摘要，涵蓋能帶、載流子濃度和傳輸特性。第二部分調查半導體器件的基本構建塊，包括p-n接面、金屬-半導體接觸和金屬-絕緣體-半導體（MIS）電容器。第三部分考察雙極性晶體管、MOSFET（MOS場效應晶體管）以及其他場效應晶體管，如JFET（接面場效應晶體管）和MESFET（金屬-半導體場效應晶體管）。第四部分專注於負阻和功率器件。本書最後涵蓋光子器件和傳感器，包括發光二極體（LED）、太陽能電池以及各種光檢測器和半導體傳感器。這本經典著作是半導體器件領域的標準教科書和參考書：


  • 提供理解當前使用的器件和評估未來器件性能及限制所需的實用基礎

  • 提供完全更新和修訂的信息，反映器件概念、性能和應用的進展

  • 包含當前感興趣主題的討論，例如將光能轉換為電能的光子器件的應用

  • 包括大量的習題集、實際案例、表格、圖形和插圖；幾個有用的附錄；以及詳細的解答手冊

  • 探討前沿技術的新研究，如MODFET、共振隧道二極體、量子級聯激光器、單電子晶體管、實空間轉移器件和MOS控制的晶閘管

《半導體器件物理學》第四版是設計工程師、研究科學家、工業和電子工程經理以及該領域研究生的不可或缺的資源。

作者簡介

S. M. SZE, PHD, is Honorary Chair Professor, College of Electrical and Computer Engineering, National Chiao Tung University, Taiwan. He has made fundamental and pioneering contributions to semiconductor devices, particularly his co-discovery of the floating-gate memory (FGM) effect that has ushered in the Fourth Industrial Revolution. Dr. Sze has authored, co-authored, and edited more than 400 papers and 16 books. He is a celebrated Member of IEEE, an Academician of Academia Simica, and a member of the US National Academy of Engineering.

YIMING LI, PHD, is Full Professor of Electrical and Computer Engineering at National Chiao Tung University, Taiwan. He has been a Visiting Professor in Stanford University, Grenoble INP, and Tohoku University. He has published more than 300 technical articles in journals, conferences, and book chapters. Dr. Li is an active member of IEEE and has served on technical committees for many international professional conferences including IEDM. He is the recipient of the Pan Wen-Yuan Foundation's Research Fellowship Award and the Chinese Institute of Electrical Engineering's Outstanding Young Electrical Engineer Award.

KWOK K. NG, PHD, is now serving on the Industry Advisory Board of the ECE Department of Wayne State University, USA, and as Adjunct Professor at National Chiao Tung University, Taiwan. He joined Bell Telephone Laboratories in 1980, and continued in its spin-offs Lucent Technologies and Agere Systems. He was with SRC (Semiconductor Research Corp.) from 2007 to 2019. Dr. Ng is an IEEE Life Fellow and former Editor of IEEE Electron Device Letters. He is author of numerous publications, including the book Complete Guide to Semiconductor Devices.

作者簡介(中文翻譯)

S. M. SZE, 博士, 是國立交通大學電機與計算機工程學院的名譽講座教授。他在半導體器件方面做出了根本性和開創性的貢獻，特別是共同發現了浮閘記憶體（Floating-Gate Memory, FGM）效應，這一發現引領了第四次工業革命。Sze 博士已發表、共同發表及編輯超過 400 篇論文和 16 本書籍。他是 IEEE 的著名會員、中華民國科學院院士，以及美國國家工程院的成員。

YIMING LI, 博士, 是國立交通大學電機與計算機工程學系的正教授。他曾擔任史丹佛大學、格勒諾布爾國立應用科學院（Grenoble INP）和東北大學的訪問教授。他在期刊、會議和書籍章節中發表了超過 300 篇技術文章。Li 博士是 IEEE 的活躍會員，並曾在許多國際專業會議的技術委員會中服務，包括 IEDM。他是潘文淵基金會研究獎學金獲得者及中華民國電機工程學會傑出青年電機工程師獎的得主。

KWOK K. NG, 博士, 目前擔任美國韋恩州立大學電機與計算機工程系的產業諮詢委員會成員，以及國立交通大學的兼任教授。他於 1980 年加入貝爾電話實驗室，並在其衍生公司 Lucent Technologies 和 Agere Systems 繼續工作。他於 2007 年至 2019 年期間在半導體研究公司（SRC）工作。Ng 博士是 IEEE 的終身會士，曾任 IEEE Electron Device Letters 的編輯。他著有多部出版物，包括書籍 Complete Guide to Semiconductor Devices.

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