Advanced Field-Effect Transistors: Theory and Applications

這本書探討了各種場效應電晶體（FET）操作背後的基本物理原理，以及在設備到電路級別設計和模擬中所面臨的挑戰和解決方案。本書將概述新型半導體器件及其在電子電路設計中的應用性。

Dharmendra Singh Yadav received the Ph.D. degree in electronics and communication engineering from the PDPM-Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India. He is currently working as Assistant Professor (Grade-I) in National Institute of Technology (NIT), Kurukshetra, Haryana India. He has more than 60 international repute publications and 4 book chapters. His current research interest includes VLSI Design: Nano-electronics Devices, Thin films transistors, Semiconductor Device, Negative Capacitance, Nanosheet FETS and circuits. Device Modeling: MOS Devices Modeling and Numerical simulation analysis of Semiconductor devices Electrical Characterization of semiconductor devices in MHz and THz frequency ranges. Circuit Design: Ultra Low Power SRAM / DRAM / RRAM based Memory Circuit Design from Devices to Array Architecture using CMOS and Advanced CMOS Devices technologies. Machine Learning in Semiconductor device/circuit-based application in research.

Sukeshni Tirkey received the Ph.D. degree in electronics and communication engineering from the PDPM-Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India. She is currently working in Maulana Azad National Institute of Technology (MANIT), Bhopal, Madhya Pradesh India. She has more than 20 international publications in reputed journals/conferences. Her current research interest includes VLSI Design: Nano-electronics Devices, Thin films transistors, Semiconductor Device, Negative Capacitance, Nanosheet FETS and circuits.

Shiromani Balmukund Rahi received his Ph D from the Indian Institute of Technology Kanpur, Uttar Pradesh, and did his postdoctoral research work at the Electronics Department, University Mostefa Benboulaid of Batna, Algeria and Korea Military Academy Seoul, Republic of Korea. He is working at University School of Information and Communication Technology Gautam Buddha University Greater Noida, Uttar Pradesh, India. He has published 25 journal articles, 18 book chapters and 2 proceedings. He has edited and successfully published 7 books. He is also associated for advanced research work at the Indian Institute of Technology Kanpur and the Electronics Department of the University Mostefa Benboulaid for the development of ultra-low-power devices such as TFETs, negative-capacitance (NC) TFETs, and nanosheet FETs.

Dharmendra Singh Yadav在印度PDPM-印度信息技術、設計和製造學院獲得電子與通信工程博士學位。他目前在印度哈里亞納邦的國家技術學院（NIT）庫魯克謝特拉擔任助理教授（一級）。他已發表了60多篇國際知名的論文和4篇專書章節。他目前的研究興趣包括VLSI設計：納米電子器件、薄膜晶體管、半導體器件、負電容、納米片FETS和電路。器件建模：MOS器件建模和半導體器件在MHz和THz頻率範圍內的數值模擬分析。電路設計：基於CMOS和先進CMOS器件技術的超低功耗SRAM / DRAM / RRAM存儲器電路設計。半導體器件/電路應用中的機器學習研究。

Sukeshni Tirkey在印度PDPM-印度信息技術、設計和製造學院獲得電子與通信工程博士學位。她目前在印度中央工程學院（MANIT）博帕爾分校擔任職位。她在知名期刊/會議上發表了20多篇國際論文。她目前的研究興趣包括VLSI設計：納米電子器件、薄膜晶體管、半導體器件、負電容、納米片FETS和電路。

Shiromani Balmukund Rahi在印度卡納普爾的印度理工學院獲得博士學位，並在阿爾及利亞巴特納的Mostefa Benboulaid大學和韓國首爾的韓國軍事學院的電子系進行博士後研究。他目前在印度北方邦大蓮華佛大學的信息與通信技術學院工作。他已發表了25篇期刊文章、18篇專書章節和2篇會議論文。他編輯並成功出版了7本書。他還與印度理工學院卡納普爾分校和Mostefa Benboulaid大學電子系合作進行先進的研究工作，開發超低功耗器件，如TFET、負電容（NC）TFET和納米片FET。