Device Circuit Co-Design Issues in FETs
Tayal, Shubham, Smaani, Billel, Rahi, Shiromani Balmukund
- 出版商: CRC
- 出版日期: 2023-08-22
- 售價: $5,070
- 貴賓價: 9.5 折 $4,817
- 語言: 英文
- 頁數: 262
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 1032414251
- ISBN-13: 9781032414256
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商品描述
This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry.
This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues.
商品描述(中文翻譯)
本書提供了新興半導體器件及其在電子電路中的應用的概述,這些器件是電子設備的基礎。《FET器件電路共同設計問題》使讀者更好地了解低功率電子器件及其在無線通信、生物感測和電路領域中的應用這一不斷發展的領域。本書將來自VLSI領域不同學科的研究人員和工程師聚集在一起,共同應對工程領域和先進低功率器件應用中的新挑戰,以提高這些技術的性能。各章節探討了FinFET器件電路、3D FET和用於電路應用的先進FET的挑戰和範圍。本書還討論了低功率記憶體設計、神經形態計算和與熱可靠性相關的問題。作者們提供了對器件物理和電路的深入理解,並討論了基於新通道/介電材料和器件架構的晶體管,以實現低功率消耗和超高開關速度,以滿足半導體行業的需求。
本書面向半導體器件和納米器件領域的學生、研究人員和專業人士,以及從事器件-電路共同設計問題的人員。
作者簡介
Shubham Tayal is an assistant professor in the Department of Electronics and Communication Engineering at SR University, Warangal, India. He has more than six years of academic/research experience teaching at undergraduate and postgraduate levels. He received his Ph.D. in microelectronics and VLSI design from the National Institute of Technology, Kurukshetra, M.Tech (VLSI Design) from YMCA University of Science and Technology, Faridabad, and B.Tech (Electronics and Communication Engineering) from MDU, Rohtak. He has published more than 40 research papers in various international journals and conferences of repute, and many papers are under review. He is on the editorial and reviewer panel of many SCI/SCOPUS-indexed international journals and conferences. He is editor/co-editor of eight books published by CRC Press (Taylor & Francis Group, USA) and Springer Nature. He acted as a keynote speaker and delivered professional talks on various forums. He is a member of various professional bodies including IEEE and IRED. He is on the advisory panel of many international conferences. He is a recipient of the Green ThinkerZ International Distinguished Young Researcher Award 2020. His research interests include the simulation and modeling of multi-gate semiconductor devices, device-circuit co-design in the digital/ analog domain, machine learning, and IoT.
Billel Smaani received his Ph.D. degree from the University of Frère Mentouri, Constantine, Algeria, in 2015. He joined the Centre Universitaire Abdelhafid Boussouf, Mila, Algeria, in 2021, where he has been an associate professor since June 2022. From 2015 to 2021, he was with the University of M'hamed Bougara Boumerdes, Algeria. His current research interests include the study, analysis, and compact modeling of advanced nanoscale field-effect transistors for analog and digital circuit co-design.
Shiromani Balmukund Rahi received a B.Sc. (Physics, Chemistry Mathematics) in 2002, an M.Sc. (Electronics) from Deen Dyal Upadhyaya Gorakhpur University, Gorakhpur, in 2005, M. Tech. (Microelectronics) from Panjab University Chandigarh in 2011, and a Doctorate of Philosophy in 2018 from the Indian Institute of Technology, Kanpur, India. He completed his Master project (M.Sc.) at the Central Electronics Engineering Research Institute (CEERI, 2005), Pilani Rajasthan, under the supervision of Dr. P C Panchariya (Director and Chief Scientist, CEERI, Pilani) and thesis (M. Tech.) under Prof. RenuVig (director and Professor, UIET Panjab University Chandigarh), post-doctoral research (Department of Computer Science, Korea Military Academy, Seoul, Republic of Korea). He has 25 international publications and ten book chapters. He has edited two books for CRC publication. He is associated with research with the Indian Institute of Technology Kanpur, India, and in the electronics department at the University Mostefa Benboulaid of Algeria, developing ultra-low power devices such as tunnel FETs, NC TFET, negative capacitance, and nanosheet FETS.
Samir Labiod was born in Constantine, Algeria, on January 5, 1981. He received electrical engineering and magister degrees in electronics from Constantine University, Algeria, in 2005 and 2008, respectively. He also received his Ph.D. from Constantine University Institute of Sciences and Technology, Constantine, Algeria, in 2013. His current research interests include the numerical modeling of electromagnetic compatibility of semiconductor devices.
Zeinab Ramezani received her Ph.D. in Electrical and Computer Engineering in 2017. She worked as an assistant professor at IAU University from 2017 to 2019 and as a research scientist at Northeastern University in Boston, MA, USA, from 2019 to 2021.She is a scientist with over ten years of experience in modeling, simulation, and characterization of novel structures; micro-and nanoelectronics; nanotechnology; nanophotonic and nanomagnetic power semiconductor devices; wide bandgap semiconductors; optoelectronic devices; plasmonic devices; and bioelectronics and biosensors. Her current research at the University of Miami, FL, USA, is focused on developing and modeling new materials and electronic tools to enable leapfrog advancements in health applications.
作者簡介(中文翻譯)
Shubham Tayal是印度沃朗格爾SR大學電子與通訊工程系的助理教授。他在本科和研究生教學方面擁有超過六年的學術/研究經驗。他在國家技術研究所Kurukshetra的微電子和VLSI設計領域獲得博士學位,YMCA科學與技術大學Faridabad的VLSI設計領域獲得碩士學位,MDU Rohtak的電子與通訊工程領域獲得學士學位。他在各種國際知名期刊和會議上發表了40多篇研究論文,還有許多論文正在審查中。他是許多SCI/SCOPUS索引的國際期刊和會議的編輯和審稿人。他是CRC出版社(Taylor & Francis Group, USA)和Springer Nature出版的八本書的編輯/合編者。他曾擔任主題演講嘉賓,在各種論壇上發表專業演講。他是包括IEEE和IRED在內的多個專業組織的成員。他是許多國際會議的顧問委員會成員。他是2020年Green ThinkerZ國際傑出青年研究員獎的獲獎者。他的研究興趣包括多門半導體器件的模擬和建模、數字/模擬領域中的器件-電路協同設計、機器學習和物聯網。
Billel Smaani於2015年在阿爾及利亞康斯坦丁的Frère Mentouri大學獲得博士學位。他於2021年加入阿爾及利亞米拉的Abdelhafid Boussouf大學,自2022年6月起擔任副教授。從2015年到2021年,他在阿爾及利亞M'hamed Bougara Boumerdes大學任職。他目前的研究興趣包括先進納米尺度場效應晶體管的研究、分析和緊湊建模,用於模擬和設計類比和數字電路。
Shiromani Balmukund Rahi於2002年獲得物理、化學和數學學士學位,2005年在Deen Dyal Upadhyaya Gorakhpur大學獲得電子學碩士學位,2011年在Panjab大學Chandigarh獲得微電子學碩士學位,2018年在印度理工學院Kanpur獲得哲學博士學位。他在中央電子工程研究所(CEERI, 2005)完成了碩士項目,指導教授是Dr. P C Panchariya(CEERI, Pilani的主任和首席科學家),在Panjab大學Chandigarh的RenuVig教授(UIET的主任和教授)指導下完成了論文(碩士)。他在韓國軍事學院計算機科學系進行了博士後研究。他發表了25篇國際論文和十篇專書章節。他為CRC出版社編輯了兩本書。他與印度理工學院Kanpur的研究以及阿爾及利亞Mostefa Benboulaid大學的電子學系合作,開發超低功耗器件,如隧道場效應晶體管、NC TFET、負電容和納米片晶體管。
Samir Labiod於1981年1月5日出生於阿爾及利亞康斯坦丁。他於2005年和2008年分別在康斯坦丁大學獲得電氣工程和碩士學位。他於2013年在康斯坦丁大學科學與技術研究所獲得博士學位。他目前的研究興趣包括半導體器件的電磁兼容性數值建模。
Zeinab Ramezani於2017年獲得電氣與計算機工程博士學位。她曾在2017年至2019年間擔任IAU大學的助理教授,並在2019年至2021年間在美國波士頓的東北大學擔任研究科學家。她是一位擁有十多年建模、模擬和特性化新結構的科學家;微納電子學;納米技術;納米光子學和納米磁性功率半導體器件;寬能隙半導體器件的經驗。