Advanced MOS Devices and their Circuit Applications

本文全面討論了先進的金氧半場效電晶體（MOS）器件及其在電路應用中的可靠性問題。此外，還將使用器件電路共同設計的方法，研究一種節能的隧道場效電晶體（Tunnel FET）電路應用，並評估其輸出電壓、功率效率、能耗和性能。

Dr. Ankur Beohar (Senior member IEEE) obtaineda PhD degree in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2018. After getting his PhD, he worked as a postdoctoral fellow in the Device Modeling Group, IISER, Bhopal, and then as a research scientist for one year under awarded Scientist Pool scheme of Council of Scientific and Industrial Research (CSIR), New Delhi. Currently, he is working as an assistant professor at Vellore Institute of Technology (VIT) Bhopal. He is an IEEE Senior Member and a Secretary of IEEE, Circuit and System Society, MP section, India. He completed his M.Tech degree in VLSI and Embedded System Design from MANIT Bhopal and B.Tech (Electronics) from RGPV University Bhopal in 2010 and 2005. He has a research and academic work experience of more than 13 years. He has a renowned research experience in the field of low-power device circuit design Memory Circuit Design and Reliability. His current research is related to new-generation innovative devices, such as optimization of gate all around (GAA)-Tunnel field effect transistor (TFET) with spacer engineering and its circuit applications. Currently, he is working in the research project sanctioned by the Science and Engineering Research Board (SERB) under the Teachers Associateship Research Excellence (TARE) scheme. Dr. Beohar has published more than 35 research publications in various peer- reviewed international conferences and SCI journals. Along with this, he has reviewed more than 100+ journal and conferences articles.

Dr. Abhishek Kumar Upadhyay obtained a PhD in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2019. After getting his PhD, he worked for one year as a postdoctoral fellow in the Model Group, Material to System Integration Laboratory, University of Bordeaux, France, and then as a staff scientist in the Chair of Electronics Devices and Integrated Circuits at Technische Universität Dresden, Germany, for two years. Currently he is working as an R&D rngineer in X-FAB GmbH, Dresden, Germany. He is the author of several research articles.

Dr. Ribu Mathew holds a doctorate degree in electronics engineering from Vellore Institute of Technology (VIT) University, Chennai Campus. A gold medallist in his post graduation, Dr. Mathew completed his MTech in VLSI design and BTech in electronics and communication engineering. In his doctoral research work, he has contributed in the field of design, modelling, and fabrication of NEMS technology piezoresistive readout-based nano cantilever sensors for chemical and biological sensing applications. In addition to the compu- tational knowledge in industrial standard NEMS devices, he has gained experience in NEMS/IC layout tools and clean room fabrication technologies from CeNSE, IISc Bangalore. He has published several research papers in reputed international journals and conferences. His research areas include the design, modelling, and fabrication of MEMS/NEMS technology- based sensor and actuator systems, especially micro/nano cantilever and diaphragm-based devices, bio-MEMS, analog/RF IC design, SoC design, and device modeling. Currently he is working as an Associate Professor, MAHE, MANIPAL University, Karnataka.

Professor Santosh Kumar Vishvakarma received the BSc in electronics from the University of Gorakhpur, Gorakhpur, in 1999, the MSc in electronics from Devi Ahilya Vishwavidyalaya, Indore, India, in 2001, the MTech in microelectronics from Punjab University, Chandigarh, India, in 2003, and the PhD in microelectronics and VLSI from the Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, India, in 2010. From 2009 to 2010, he was with University Graduate Center, Kjeller, Norway, as a postdoctoral fellow under European Union COMON project. Professor Vishvakarma is with the Department of Electrical Engineering, Indian Institute of Technology Indore, MP, India as a professor at IIT Indore. He is leading the Nanoscale Devices and VLSI Circuit and System Design (NSDCS) Laboratory since 2010. He is engaged with teaching and research in the areas of:

• Energy-efficient and reliable SRAM memory design
• Enhancing performance and configurable architecture for DNN accelerators
• SRAM based in-memory computing architecture for edge AI
• Reliable, secure design for IoT applications
• Design for reliability

He has supervised a total of seventeen PhD students, and currently six students are working with his group. He has authored or co-authored more than 175 research papers in peer-reviewed international journals and conferences. He was also granted 04 Indian Patent from IIT Indore and has thirteen sponsored research projects. He is a senior member of IEEE, professional member of VLSI Society of India, associate member of Institute of Nanotechnology, and life member of Indian Microelectronics Society (IMS), India.

Dr. Ankur Beohar（IEEE高級會員）於2018年從印度理工學院（IIT）Indore分校獲得電氣工程博士學位。在獲得博士學位後，他曾在印度理工學院教育研究所（IISER）Bhopal的器件建模小組擔任博士後研究員，然後在印度科學與工業研究委員會（CSIR）新德里分部的科學家池計劃下擔任研究科學家一年。目前，他在Vellore理工學院（VIT）Bhopal分校擔任助理教授。他是IEEE高級會員，也是印度IEEE電路和系統學會MP分部的秘書。他於2010年和2005年分別在MANIT Bhopal和RGPV大學Bhopal獲得了VLSI和嵌入式系統設計的碩士學位和電子學的學士學位。他擁有超過13年的研究和學術工作經驗。他在低功耗器件電路設計、記憶電路設計和可靠性領域擁有卓越的研究經驗。他目前的研究與新一代創新器件相關，例如優化全閘極（GAA）-隧道場效應晶體管（TFET）與間隔工程及其電路應用。目前，他正在科學和工程研究委員會（SERB）根據教師聯合研究卓越（TARE）計劃資助的研究項目中工作。Beohar博士在各種同行評審的國際會議和SCI期刊上發表了35多篇研究論文。此外，他還審查了100多篇期刊和會議文章。

Dr. Abhishek Kumar Upadhyay於2019年從印度理工學院（IIT）Indore分校獲得電氣工程博士學位。在獲得博士學位後，他在法國波爾多大學材料到系統集成實驗室的模型小組擔任博士後研究員一年，然後在德國德累斯頓工業大學電子器件和集成電路講座擔任職員科學家兩年。目前，他在德國德累斯頓的X-FAB GmbH擔任研發工程師。他是幾篇研究文章的作者。

Dr. Ribu Mathew擁有Vellore理工學院（VIT）Chennai分校的電子工程博士學位。作為研究生的金牌得主，Mathew博士完成了VLSI設計的碩士學位和電子與通信工程的學士學位。在他的博士研究工作中，他在化學和生物感測應用中為NEMS技術壓阻讀出式納米懸臂梁傳感器的設計、建模和製造做出了貢獻。除了在工業標準NEMS器件的計算知識外，他還從CeNSE，IISc Bangalore獲得了NEMS/IC佈局工具和無塵室製造技術的經驗。他在知名國際期刊和會議上發表了多篇研究論文。他的研究領域包括基於MEMS/NEMS技術的傳感器和致動器系統的設計、建模和製造，特別是微/納米懸臂梁和薄膜懸臂梁器件、生物MEMS、模擬/射頻IC設計、SoC設計和器件建模。目前，他在卡納塔克邦MAHE MANIPAL大學擔任副教授。

Santosh Kumar Vishvakarma教授於1999年從Gorakhpur大學獲得電子學學士學位，2001年從Devi Ahilya Vishwavidyalaya獲得電子學碩士學位，2003年從旁遮普大學獲得微電子學碩士學位，2010年從印度理工學院Roorkee分校的電子與通信工程系獲得微電子學和VLSI的博士學位。從2009年到2010年，他在挪威Kjeller的大學研究中心擔任歐盟COMON項目的博士後研究員。Vishvakarma教授現任職於該系。