Fundamentals of Modern VLSI Devices, 2/e (IE-Paperback) (現代 VLSI 裝置基礎 (第二版))

●Two new chapters cover read and write operations of commonly used SRAM, DRAM and non-volatile memory arrays, in addition to silicon-on-insulator (SOI) devices
●18 useful appendices discuss topics such as spatial variation of quasi-Fermi potentials and power gain of a two-port network
●New homework exercises at the end of every chapter engage students with real-life problems and test their understanding

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.