Device Modeling for Analog and RF CMOS Circuit Design
暫譯: 類比與射頻CMOS電路設計的元件建模

Trond Ytterdal, Yuhua Cheng, Tor A. Fjeldly

  • 出版商: Wiley
  • 出版日期: 2003-05-07
  • 售價: $2,375
  • 語言: 英文
  • 頁數: 306
  • 裝訂: Hardcover
  • ISBN: 0471498696
  • ISBN-13: 9780471498698
  • 相關分類: CMOS
  • 已絕版

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商品描述

In order to keep up with global demand, microelectronics engineers are continually challenged to produce increasingly complex, high performance integrated circuits. The steady downscaling of MOSFET/CMOS technology has highlighted the need for a thorough understanding of the properties, potentials and limitations of the latest device models and technology. Presenting state-of-the-art MOSFET models, this book will prove a valuable reference and text for engineers striving to achieve first-time-right, reduced time-to-market silicon products.

Featuring:

  • A complete survey of the CMOS device models used in modern analog and RF integrated circuit design.

  • A thorough treatment of the device modeling challenges faced by designers today.

  • An examination of the most commonly used MOSFET models, including BSIM4 and EKV.

  • A discussion of the modeling of process variations and device mismatch effects, along with device model quality assurance.

  • Two accompanying software packages, AIM-Spice and MOSCalc, available via the Internet.

Bridging the gap between modeling and analog circuit design Device Modeling for Analog & RF CMOS Circuit Design will appeal to practicing microelectronics engineers and senior and graduate level students following courses in analog integrated circuit design.

Table of Contents

Preface.

MOSFET Device Physics and Operation.

MOSFET Fabrication.

RF Modeling.

Noise Modeling.

Proper Modeling for Accurate Distortion Analysis.

The BSIM4 MOSFET Model.

The EKV Model.

Other MOSFET Models.

Bipolar Transistors in CMOS Technologies.

Modeling of Passive Devices.

Effects and Modeling of Process Variation and Device Mismatch.

Quality Assurance of MOSFET Models.

Index.

商品描述(中文翻譯)

為了跟上全球需求,微電子工程師面臨持續挑戰,必須生產越來越複雜且高效能的集成電路。MOSFET/CMOS技術的穩定縮小突顯了對最新設備模型和技術的特性、潛力及限制的深入理解的需求。本書介紹了最先進的MOSFET模型,將成為工程師在追求一次成功、縮短上市時間的矽產品時的重要參考和教材。

本書特色:
- 對現代類比和射頻集成電路設計中使用的CMOS設備模型進行全面調查。
- 徹底探討當今設計師面臨的設備建模挑戰。
- 檢視最常用的MOSFET模型,包括BSIM4和EKV。
- 討論過程變異和設備不匹配效應的建模,以及設備模型的質量保證。
- 兩個附帶的軟體包,AIM-Spice和MOSCalc,可通過互聯網獲得。

《類比與射頻CMOS電路設計的設備建模》彌合了建模與類比電路設計之間的鴻溝,將吸引實踐中的微電子工程師以及修習類比集成電路設計課程的高年級和研究生。

目錄:
- 前言
- MOSFET設備物理與操作
- MOSFET製造
- 射頻建模
- 噪聲建模
- 精確失真分析的正確建模
- BSIM4 MOSFET模型
- EKV模型
- 其他MOSFET模型
- CMOS技術中的雙極性晶體管
- 被動設備的建模
- 過程變異和設備不匹配的效應與建模
- MOSFET模型的質量保證
- 索引