Design and Characterization of Integrated Varactors for RF Applications (射頻應用中集成變容二極體的設計與特性化)

Inigo Gutierrez, Juan Meléndez, Erik Hernández

  • 出版商: Wiley
  • 出版日期: 2007-02-05
  • 售價: $4,940
  • 貴賓價: 9.5$4,693
  • 語言: 英文
  • 頁數: 220
  • 裝訂: Paperback
  • ISBN: 0470025875
  • ISBN-13: 9780470025871
  • 海外代購書籍(需單獨結帳)

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商品描述

Description 

Varactors are passive semiconductor devices used in electronic circuits, as a voltage-controlled way of storing energy in order to boost the amount of electric charge produced. In the past, the use of low-cost fabrication processes such as complementary metal oxide semiconductor (CMOS) and silicon germanium (SiGe) were kept for integrated circuits working in frequency ranges below the GHz. Now, the increased working frequency of radio frequency integrated circuits (RF ICs) for communication devices, and the trend of system-on-chip technology, has pushed the requirements of varactors to the limit. As the frequency of RF applications continues to rise, it is essential that passive devices such as varactors are of optimum quality, making this a critical design issue.

Initially describing the physical phenomena that occur in passive devices within standard IC fabrication processes, Design and Characterization of Integrated Varactors for RF Applications goes on to:

  • present information on the design of wide band electrical varactor models (up to 5 GHz) which enable the accurate prediction of device performance;
  • propose a specific methodology for the measurement of integrated varactors, covering on-wafer measurement structures, the calibration process, and detailed descriptions of the required equipment; 
  • explain de-embedding techniques and also analyse confidence level and uncertainty linked to the test set-up;
  • examine the design of a voltage controlled oscillator (VCO) circuit as a practical example of the employment of methods discussed in the book.

Providing the reader with the necessary technical knowledge for dealing with challenging VCO designs, this book is an essential guide for practising RF and microwave engineers working on the design of electronic devices for integrated circuits. It is also a useful reference for postgraduate students and researchers interested in electronic design for RF applications.

 

Table of Contents

List of Figures.

List of Tables.

Preface.

Acknowledgements.

Chapter 1. Introduction.

Chapter 2. PN-junction Varactors.

Chapter 3. MOS Varactors.

Chapter 4. Measurement Techniques for Integrated Varactors.

Chapter 5. Modeling Varactors.

Chapter 6. Design Rules for Integrated Varactors.

Chapter 7. Design of a Demonstrator: Integrated VCO.

Appendix 1: Geometric Characteristics of Varactors.

Appendix 2: Validation of the Predictions Provided by Equations of Chapter 5.

Appendix 3: Measurement of Oscillator's Performance.

Glossary.

Index.

商品描述(中文翻譯)

描述

變容二極體是用於電子電路的被動半導體元件,作為一種電壓控制的能量儲存方式,以提高產生的電荷量。過去,低成本的製造工藝如互補金屬氧化物半導體(CMOS)和矽鍺(SiGe)主要用於工作頻率低於GHz的集成電路。如今,無線頻率集成電路(RF ICs)在通信設備中的工作頻率提高,以及系統單晶片技術的趨勢,已將變容二極體的需求推向極限。隨著RF應用頻率的不斷上升,確保變容二極體等被動元件的最佳品質變得至關重要,這是一個關鍵的設計問題。

本書《RF應用的集成變容二極體的設計與特性化》最初描述了在標準集成電路製造過程中發生的被動元件的物理現象,接著:

- 提供有關寬頻電變容二極體模型(高達5 GHz)設計的信息,這些模型能夠準確預測元件性能;
- 提出一種特定的方法論,用於集成變容二極體的測量,涵蓋晶圓上的測量結構、校準過程以及所需設備的詳細描述;
- 解釋去嵌入技術,並分析與測試設置相關的置信水平和不確定性;
- 檢視電壓控制振盪器(VCO)電路的設計,作為本書中討論方法的實際應用範例。

本書為讀者提供了處理挑戰性VCO設計所需的技術知識,是從事集成電路電子設備設計的RF和微波工程師的必備指南。對於對RF應用電子設計感興趣的研究生和研究人員來說,這也是一本有用的參考書。