Handbook of Gan Semiconductor Materials and Devices
暫譯: 氮化鎵半導體材料與器件手冊

Bi, Kuo, Ku, Peicheng

  • 出版商: CRC
  • 出版日期: 2019-12-12
  • 售價: $2,400
  • 貴賓價: 9.5$2,280
  • 語言: 英文
  • 頁數: 686
  • 裝訂: Quality Paper - also called trade paper
  • ISBN: 0367875314
  • ISBN-13: 9780367875312
  • 相關分類: GAN 生成對抗網絡半導體
  • 立即出貨 (庫存 < 3)

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商品描述

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.

 

Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China.

 

Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.

 

Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.

 

Bo Shen is the Cheung Kong Professor at Peking University in China.

商品描述(中文翻譯)

這本書探討了能效白光發光二極體(LED)、激光二極體和功率電子設備的材料生長、器件製造、器件應用及商業化。書中首先概述了半導體材料、物理學、生長及表徵技術的基本知識,接著詳細討論了基於氮化鎵(GaN)先進設備的優勢、缺點、設計問題、處理、應用及主要挑戰。內容包括先進的材料合成技術,並概述了新興的氮化鎵(GaN)和氮化鋁(AlN)基板的生長技術及其在電子學、檢測、感測、光電學和光子學中的應用。

翁剛(Wayne)比是中國天津河北工業大學資訊與電氣工程學院的特聘講座教授及副院長。

郭浩中(Henry)是中國國立交通大學光電中心的特聘教授及副主任,位於台灣新竹。

顧培誠是美國密西根大學安娜堡分校電機工程與計算機科學系的副教授。

沈博是中國北京大學的長江教授。

作者簡介

Wayne Bi is distinguished chair professor and associate dean in the College of Information and Electrical Engineering, chief scientist in the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. He is an elected fellow of the Optical Society of America (OSA).

 

Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master's level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institutio

作者簡介(中文翻譯)

韋恩·比是中國天津河北工業大學資訊與電氣工程學院的傑出講座教授及副院長,並擔任電氣設備可靠性與智能國家重點實驗室的首席科學家。他在加州大學聖地牙哥分校獲得應用物理學博士學位。在業界工作超過二十年,曾任職於惠普實驗室、安捷倫科技實驗室及飛利浦Lumileds,專注於通過分子束外延(MBE)和金屬有機氣相外延(MOVPE)技術開發尖端的光電和光子材料及器件結構,並應用於光電和電子設備。此前,他曾擔任南京科技/NNCrystal的首席工程師及副總裁。比博士已發表或共同發表超過60篇經過審核的期刊論文,並在多個會議上發表演講,擁有二十項專利。他是美國光學學會(OSA)選舉產生的會士。

郭浩中(亨利)是國立交通大學光電中心的傑出教授及副主任。他在伊利諾伊大學香檳分校的電機與計算機工程系獲得博士學位。他指導過超過四十位博士及碩士級的科學家和工程師,並擁有豐富的業界經驗,包括在貝爾實驗室、盧森特科技、安捷倫科技及LuxNet公司工作。他在III-V族光電器件和材料、固態照明工藝開發以及量子器件的製造和測量領域有深入研究。他是《IEEE量子電子學選定主題期刊》和《光波技術期刊》的副編輯。他已在同行評審的期刊上發表超過300篇論文,並是SPIE、美國光學學會(OSA)及其他機構的選舉會士。