Handbook of Silicon Carbide Materials and Devices (Hardcover)

Feng, Zhe Chuan

Handbook of Silicon Carbide Materials and Devices (Hardcover)
  • 出版商: CRC
  • 出版日期: 2023-05-31
  • 售價: $7,700
  • 貴賓價: 9.5 折 $7,315
  • 語言: 英文
  • 頁數: 444
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 0367188260
  • ISBN-13: 9780367188269
  • 相關分類: 半導體、材料科學 Meterials、物理學 Physics

    • 立即出貨 (庫存=1)

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商品描述

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.

The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction.

This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

商品描述(中文翻譯)

本手冊介紹了矽碳化物（SiC）這種21世紀的功率半導體的關鍵特性。它描述了相關技術，報導了近年來的快速發展和成就，並討論了該領域中尚存的挑戰性問題。

本書共分為15章，首章由該領域的權威教授W. J. Choyke撰寫，並分為四個部分。主題包括前太陽系矽碳化物的歷史、氣相-液相-固相生長、3C-SiC/Si的光譜研究、21世紀的發展和挑戰；化學氣相沉積原理和技術、4H-SiC的同質外延、生長在4H-SiC上的立方體SiC、SiC的熱氧化過程和金屬氧化物半導體界面、拉曼散射、近紅外發光研究、穆勒矩陣橢圓偏振度、拉曼顯微鏡和成像、4H-SiC紫外光電二極管、輻射探測器以及短波長和同步輻射X射線繞射。

這本全面的著作對21世紀的工程、材料和基礎科學知識做出了重要貢獻，將對材料生長者、設計師、工程師、科學家、研究生和企業家感興趣。

作者簡介

Professor Zhe Chuan Feng earned his PhD in condensed matter physics from University of Pittsburgh in 1987, and, earlier, BS (1962-68) and MS (1978-81) from the Department of Physics at Peking University. He has worked at Emory University (1988-92), National University of Singapore (1992-94), Georgia Tech (1994-95), EMCORE Corporation (1995-97), Institute of Materials Research & Engineering, Singapore (1998-2001), Axcel Photonics (2001-02), Georgia Tech (2002-03), National Taiwan University (NTU) (2003-20151) as a professor at the Graduate Institute of Photonics & Optoelectronics and the Department of Electrical Engineering; and Guangxi University (GXU) (2015-2020) as a distinguished professor at the School of Physical Science and Technology. After retiring from NTU and GXU and moving back to Georgia, USA, he established the Science Exploring Lab and in January 2022 joined Kennesaw State University as an Adjunct Professor in the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology.

He has long been devoted to materials research and growth of III-V and II-VI compounds, LED, III-nitrides, SiC, ZnO, GaO and other semiconductors and oxides. Professor Feng has edited twelve review books on compound semiconductors and microstructures, porous Si, SiC and III-nitrides, ZnO devices, and nanoengineering, especially in the 21st century on WBGs: SiC Power Materials: Devices and Applications, Springer (2004); III-Nitride Semiconductor Materials, Imperia College Press (2006); III-Nitride Devices and Nanoengineering, Imperia College Press (2008); Handbook of Zinc Oxides and Related Materials: Volume 1) Materials, and Volume 2) Devices and Nano-Engineering, T&F/CRC (2012); Handbook of Solid-State Lighting and LEDs, T&F/CRC (2017); and III-Nitride Materials, Devices and Nanostructures, World Scientific Publishing (2017).

He has authored and co-authored more than 570 scientific papers with more than 420 indexed by Science Citation Index (SCI) and cited more than 6600 times, with h-index: 40 and i10-index: 152. Among these, he has published more than 50 journal papers and more than 70 conference papers on SiC as well as three review books on SiC. He has been a symposium organizer and invited speaker at numerous international conferences and universities. He has served as a guest editor for special journal issues and has been a visiting or guest professor at Sichuan University, Nanjing Tech University, South China Normal University, Huazhong University of Science & Technology, Nankai University, and Tianjin Normal University. Professor Feng has been a fellow of SPIE since 2013. More details on his academic contributions can be found at https: //scholar.google.com/citations?hl=en&user=vdyXZpEAAAAJ and https: //www.ee.ntu.edu.tw/profile1.php?teacher_id=941011&p=5.

作者簡介(中文翻譯)

「鄭川傑教授」於1987年從匹茲堡大學獲得凝聚態物理學博士學位，早期於北京大學物理學系獲得學士學位（1962-68年）和碩士學位（1978-81年）。他曾在埃默里大學（1988-92年）、新加坡國立大學（1992-94年）、喬治亞理工學院（1994-95年）、EMCORE公司（1995-97年）、新加坡材料研究與工程學院（1998-2001年）、Axcel Photonics（2001-02年）、喬治亞理工學院（2002-03年）、國立臺灣大學（2003-2015年）擔任光電與光電子學研究所和電機工程學系的教授，以及廣西大學（2015-2020年）擔任物理科學與技術學院的特聘教授。在從臺灣大學和廣西大學退休並回到美國喬治亞州後，他建立了科學探索實驗室，並於2022年1月加入肯尼索州立大學，擔任南方理工學院電機與電腦工程系的兼職教授。

他長期致力於III-V和II-VI化合物、LED、III氮化物、碳化矽、氧化鋅、氧化鎵等半導體和氧化物的材料研究和生長。鄭川傑教授編輯了十二本關於化合物半導體和微結構、多孔矽、碳化矽和III氮化物、氧化鋅器件以及納米工程的綜述書籍，特別是21世紀關於寬禁帶半導體的研究，包括《碳化矽功率材料：器件和應用》（Springer，2004年）；《III氮化物半導體材料》（Imperia College Press，2006年）；《III氮化物器件和納米工程》（Imperia College Press，2008年）；《氧化鋅及相關材料手冊：第一卷）材料，第二卷）器件和納米工程》（T&F/CRC，2012年）；《固態照明和LED手冊》（T&F/CRC，2017年）；以及《III氮化物材料、器件和納米結構》（World Scientific Publishing，2017年）。

他撰寫和合著了570多篇科學論文，其中超過420篇被科學引文索引（SCI）收錄，引用次數超過6600次，h指數為40，i10指數為152。其中，他發表了50多篇關於碳化矽的期刊論文和70多篇會議論文，以及三本碳化矽的綜述書籍。他曾擔任多個國際會議和大學的研討會組織者和特邀演講嘉賓。他曾擔任特刊的客座編輯，並曾擔任四川大學、南京工業大學、華南師範大學、華中科技大學、南開大學和天津師範大學的訪問或客座教授。鄭川傑教授自2013年起成為SPIE的會士。更多關於他學術貢獻的詳細信息可在https://scholar.google.com/citations?hl=en&user=vdyXZpEAAAAJ和https://www.ee.ntu.edu.tw/profile1.php?teacher_id=941011&p=5找到。

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