Semiconductor Physics: Principles, Theory and Nanoscale (Hardcover)
暫譯: 半導體物理:原理、理論與納米尺度 (精裝版)
Tiwari, Sandip
- 出版商: Oxford University
- 出版日期: 2020-10-22
- 售價: $2,300
- 貴賓價: 9.8 折 $2,254
- 語言: 英文
- 頁數: 832
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 019875986X
- ISBN-13: 9780198759867
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相關分類:
半導體、物理學 Physics
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相關主題
商品描述
The subject of semiconductor physics today includes not only many of the aspects that constitute solid state physics, but also much more. It includes what happens at the nanoscale and at surfaces and interfaces, behavior with few interaction events and few carriers --- electrons and their
quasi-particle holes --- in the valence bands, the exchange of energies in various forms, the coupling of energetic events over short and long length scales, quantum reversibility tied to macroscale linearity and eventually to nonlinearities, the thermodynamic and statistical consequences of
fluctuation-dissipation, and others. This text brings together traditional solid-state approaches from the 20th century with developments of the early part of the 21st century, to reach an understanding of semiconductor physics in its multifaceted forms. It reveals how an understanding of what
happens within the material can lead to insights into what happens in its use.
The collection of four textbooks in the Electroscience series culminates in a comprehensive understanding of nanoscale devices -- electronic, magnetic, mechanical and optical -- in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and
solid-state physics.
商品描述(中文翻譯)
半導體物理的主題今天不僅包括構成固態物理的許多方面,還包括更多內容。它涵蓋了在納米尺度和表面及界面上發生的現象,涉及少量互動事件和少量載流子——電子及其準粒子孔——在價帶中的行為,各種形式的能量交換,短距離和長距離尺度上能量事件的耦合,與宏觀線性及最終非線性相關的量子可逆性,波動-耗散的熱力學和統計後果,以及其他內容。本書將20世紀的傳統固態方法與21世紀早期的發展結合在一起,以達成對半導體物理多面向形式的理解。它揭示了對材料內部發生的現象的理解如何能夠引導我們洞察其使用過程中的情況。
《電科學系列》中的四本教科書的集合在第四卷中達到了對納米尺度設備——電子、磁性、機械和光學——的全面理解。該系列通過專門探討基礎半導體和固態物理的卷數,逐步建立到這一最後主題。
作者簡介
Sandip Tiwari, Charles N. Mellowes Professor in Engineering, Cornell University
Sandip Tiwari is Charles N. Mellowes Professor in Engineering at Cornell University and Visiting Professor at Universite de Paris-Sud (Orsay). His contributions to engineering have included the invention of nanocrystal memories, as a group researcher in the first demonstration of SiGe bipolar transistor and a variety of others of fundamental importance-theoretical and experimental-in electronic and optical devices, circuits and architectures. He was founding editor-in-chief of IEEE's Transactions on Nanotechnology. Among the various recognitions of his contributions are the Cledo Brunetti award of IEEE (2007), the Young Scientist Award from Institute of Physics' GaAs & Related Compounds (2003), the Distinguished Alumni award of IIT Kanpur (2002), and the fellowships of IEEE (1994) and APS (1998).
作者簡介(中文翻譯)
沙迪普·提瓦里(Sandip Tiwari),康奈爾大學查爾斯·N·梅洛斯工程教授
沙迪普·提瓦里是康奈爾大學的查爾斯·N·梅洛斯工程教授,並且是巴黎南方大學(Universite de Paris-Sud, Orsay)的訪問教授。他在工程領域的貢獻包括發明納米晶體記憶體,作為團隊研究人員參與了矽鍺(SiGe)雙極性晶體管的首次示範,以及在電子和光學設備、電路和架構中其他多項具有基礎重要性的理論和實驗研究。他是IEEE《納米技術學報》(Transactions on Nanotechnology)的創始主編。他的貢獻獲得了多項認可,包括IEEE的克萊多·布魯內提獎(Cledo Brunetti award, 2007)、物理學會的年輕科學家獎(Young Scientist Award, 2003)、印度理工學院坎普爾分校的傑出校友獎(Distinguished Alumni award, 2002),以及IEEE(1994年)和美國物理學會(APS, 1998年)的院士資格。